Tag: FET
![GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET](https://www.electronics-lab.com/wp-content/uploads/2022/06/nexperia-gan039-650ntb.jpg)
GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and...
Continue Reading![Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die](https://www.electronics-lab.com/wp-content/uploads/2022/03/Teledyne-HiRel-99102-GaN-Driver-Die-for-Release-1024x958.jpg)
Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering a very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne HiRel’s 100 V high-reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital...
Continue Reading![EPC2067 40 V, 409 A(pulsed) eGaN FET EPC2067 40 V, 409 A(pulsed) eGaN FET](https://www.electronics-lab.com/wp-content/uploads/2021/12/epc-2067-40-v-409-apulsed-egan-fet-lrg.jpg)
EPC2067 40 V, 409 A(pulsed) eGaN FET
EPC's EPC2067 is a 40 V eGaN FET for state-of-the-art power density The EPC2067 from EPC is a 40 V, 1.3 mΩ (typical) eGaN FET with a pulsed current rating of 409 A in a tiny 9.3 mm2 footprint. This device is ideal for applications with demanding high power density performance...
Continue Reading![SiC power FETs boast super-low 6-mΩ RDS(on) SiC power FETs boast super-low 6-mΩ RDS(on)](https://www.electronics-lab.com/wp-content/uploads/2021/09/4L-drawnchip-2-9-2-21.jpg)
SiC power FETs boast super-low 6-mΩ RDS(on)
At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are...
Continue Reading![STDRIVEG600 Gate Driver for GaN Transistors STDRIVEG600 Gate Driver for GaN Transistors](https://www.electronics-lab.com/wp-content/uploads/2021/08/130157761.png)
STDRIVEG600 Gate Driver for GaN Transistors
STMicroelectronics' single-chip half-bridge gate driver is designed for enhancement mode GaN FETs or N-channel power MOSFETs STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is...
Continue Reading![GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board](https://www.electronics-lab.com/wp-content/uploads/2021/02/EPC9157_–_300_W_1_16th_Brick_Evaluation_Module-1024x666.jpg)
GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board
EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation...
Continue Reading![EPC2218 Enhancement-Mode GaN Power Transistors EPC2218 Enhancement-Mode GaN Power Transistors](https://www.electronics-lab.com/wp-content/uploads/2021/01/BlogImage.ashx_-1024x538.jpg)
EPC2218 Enhancement-Mode GaN Power Transistors
EPC's 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency EPC's EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with...
Continue Reading![Nexperia Releases New GaN FET Devices Nexperia Releases New GaN FET Devices](https://www.electronics-lab.com/wp-content/uploads/2020/06/GAN039-650NBB.png)
Nexperia Releases New GaN FET Devices
Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company’s high-voltage GaN HEMT H2 technology in both TO-247 and the company's proprietary CCPAK surface mount packaging. The cascode within the devices allows...
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