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7mΩ SiC FETs deliver better performance, improved efficiency and lower losses
With an RDS(on) of just 7 mΩ, the new SiC-FETs from UnitedSiC are designed for high performance switching in high power applications such as motor control in the automotive sector or for DC/DC converters and vehicle chargers .
Based on a unique cascode configuration, the UF3C/UF3SC series provides higher switching speeds, higher efficiency, and lower losses while at the same time offering a ‘drop-in’ replacement solution for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET parts. This means system upgrades for greater performance and efficiency can be realized without requiring changes to the existing gate drive circuitry. Turn-on losses can be reduced based on a 50 percent reduction in Qrr. For high current use, a small, low-cost RC snubber is required, which also simplifies EMI design.
Features
- 650V and 1200V
- Low RDS(on) from 7mohm to 150mohm
- Excellent body diode performance (Vf < 2V)
- Drive with any Si and/or SiC gate drive voltage
- Integrated ESD and gate protection
- Full suite of industry standard packages – TO-220-3L, D2PAK-3L, TO-247-3L & -4L (Kelvin)
more information: unitedsic.com
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