Broadcom AFBR-S4N33C013 is a silicon photo multiplier

The Broadcom^® AFBR-S4N33C013 is a single silicon photomultiplier (SiPM) used for ultra-sensitive precision measurement of single photons. The active area is 3.0 × 3.0 mm2.

The high packing density of the single chips is achieved using through-silicon-via (TSV) technology and a chip-sized package (CSP). Larger areas can be covered by tiling multiple AFBR-S4N33C013 CSPs almost without any edge losses. The protective layer is made by a glass highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum.

The AFBR-S4N33C013 SiPM is best suited for the detection of low-level pulsed light sources, especially for the detection of Cherenkov- or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr). This product is lead-free and compliant with RoHS.

Key features

• High PDE of more than 54% at 420 nm
• Chip-sized package (CSP)
• Excellent SPTR and CRT
• Excellent uniformity of breakdown voltage, 180 mV (3 sigma)

Additional features

• Excellent uniformity of gain
• With TSV technology (4-side tileable), with high fill factors
• Size 3.14 × 3.14 mm2
• Cell pitch 30 × 30 μm2
• A highly transparent glass protection layer
• Operating temperature range from –40 °C to +85 °C
• RoHS and REACH compliant

Applications

• X-Ray and Gamma Ray Detection
• Gamma Ray Spectroscopy
• Safety and Security
• Nuclear Medicine
• Positron Emission Tomography
• Life Sciences
• Flow Cytometry
• Fluorescence – luminescence Measurements
• Time Correlated Single Photon Counting
• High Energy Physics
• Astrophysics

more information: www.broadcom.com

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