Broadcom AFBR-S4N66C013 NUV-HD single silicon photo multiplier

The Broadcom® AFBR-S4N66C013 is a single silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons.

The active area is 6.14 × 6.14 mm2

Key features

• High PDE of more than 55% at 420 nm
• High fill factors
• Excellent SPTR and CRT
• Excellent uniformity of breakdown voltage

Additional features

High packing density of the single chips is achieved using through-silicon-via (TSV) technology. Larger areas can be covered by tiling multiple AFBR-S4N66C013 chips to an array almost without any edge losses. The protective layer is made by a glass highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum.

Features:

• High PDE of more than 55% at 420 nm
• High fill factors
• Excellent SPTR and CRT
• Excellent uniformity of breakdown voltage
• Excellent uniformity of gain
• With TSV technology (4-side tilable)
• Size 6.14 × 6.14 mm2 n Cell pitch 30 × 30 μm2
• Highly transparent glass protection layer
• Operating temperature range from –40°C to +85°C
• RoHS and REACH compliant

Applications

• X-ray and gamma ray detection
• Gamma ray spectroscopy
• Safety and security
• Nuclear medicine
• Positron emission tomography
• Life sciences n Flow cytometry
• Fluorescence – luminescence measurements
• Time correlated single photon counting
• High energy physics
• Astrophysics

more information: www.broadcom.com

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