Category: Parts
![MEMS microspeaker for wearables weighs 56mg MEMS microspeaker for wearables weighs 56mg](https://www.electronics-lab.com/wp-content/uploads/2021/11/xmems630_0.jpg)
MEMS microspeaker for wearables weighs 56mg
Startup xMEMS Labs Inc. (Santa Clara, Calif.) has launched a MEMS microspeaker called Cowell that it claims is the world's smallest. It measures 3.2mm by 1.15mm by 6.0mm (22 cubic millimeters) and weighs 56 milligrams making it suitable for true wireless stereo earbuds. Cowell...
Continue Reading![CUI Devices Introduces Industry’s Smallest Micro Buzzer CUI Devices Introduces Industry’s Smallest Micro Buzzer](https://www.electronics-lab.com/wp-content/uploads/2021/10/3.2-mm-micro-buzzer-print-scaled-1024x597.jpg)
CUI Devices Introduces Industry’s Smallest Micro Buzzer
CUI Devices’ Audio Group today announced the introduction of a 3.2 mm x 3.2 mm magnetic transducer buzzer, making it among the smallest micro buzzers in the industry. As the latest addition to CUI Devices’ micro buzzers line, the CMT-322-65-SMT-TR features a low profile of 2 mm,...
Continue Reading![EPC2216 – 15 V GaN Power Transistor EPC2216 – 15 V GaN Power Transistor](https://www.electronics-lab.com/wp-content/uploads/2021/10/epc-epc2216-enhancement-mode-power-transistor-lrg-a.jpg)
EPC2216 – 15 V GaN Power Transistor
The EPC2216 from Efficient Power Conversion is a GaN Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 15 V, Drain Source Resistance 20 to 26 milli-ohm, Continous Drain Current 3.4 A, Pulsed Drain Current 28 A. Specifications Configuration: Single...
Continue Reading![Nexperia Industrial & Automotive LFPAK56D half-bridge MOSFETs Nexperia Industrial & Automotive LFPAK56D half-bridge MOSFETs](https://www.electronics-lab.com/wp-content/uploads/2021/10/nexperia-lowpowermosfets-halfbridge.jpg)
Nexperia Industrial & Automotive LFPAK56D half-bridge MOSFETs
LFPAK56D half-bridge - 60% lower parasitic inductance and improved thermal performance A series of half-bridge (high side & low side) MOSFETs constructed in the space-saving LFPAK56D package format. Occupying 30% lower PCB area compared to dual MOSFETs for 3 phase motor control...
Continue Reading![New T-configuration MOSFET Relay Modules with 1 pA Low Leakage Current New T-configuration MOSFET Relay Modules with 1 pA Low Leakage Current](https://www.electronics-lab.com/wp-content/uploads/2021/09/Omron-T-modules.jpg)
New T-configuration MOSFET Relay Modules with 1 pA Low Leakage Current
OMRON Electronic Components Europe has introduced new high voltage and high current versions of its T-configuration MOSFET relay modules. The new G3VM T-modules with mechanical and MOSFET relay technology provides an accurate, compact, and long-lasting switching solution with no...
Continue Reading![KLS Series Illuminated Pushbutton KLS Series Illuminated Pushbutton](https://www.electronics-lab.com/wp-content/uploads/2021/09/ck-components-kls-series-illuminated-pushbutton.webp)
KLS Series Illuminated Pushbutton
C&K's pushbutton switch has audible feedback and provides the status of the switches’ positioning C&K's KLS series pushbutton switch meets market requirements on haptic and sound with clear “click” sound feedback. It provides the status of the switches’ positioning...
Continue Reading![NJR (New Japan Radio) NJG1817ME4-TE1 10W High Power SPDT Switch NJR (New Japan Radio) NJG1817ME4-TE1 10W High Power SPDT Switch](https://www.electronics-lab.com/wp-content/uploads/2021/09/188617253.png)
NJR (New Japan Radio) NJG1817ME4-TE1 10W High Power SPDT Switch
NJR (New Japan Radio) NJG1817ME4-TE1 10W High Power SPDT Switch offers a high power handling capability of 40dBm. This SPDT switch also offers high linearity and low insertion loss up to 6GHz. The high-power SPDT switch features a high switching speed that is enough capable of 5G...
Continue Reading![SiC power FETs boast super-low 6-mΩ RDS(on) SiC power FETs boast super-low 6-mΩ RDS(on)](https://www.electronics-lab.com/wp-content/uploads/2021/09/4L-drawnchip-2-9-2-21.jpg)
SiC power FETs boast super-low 6-mΩ RDS(on)
At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are...
Continue Reading