Current bending yields low-power magnetic memory

23 March, 2016

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by Harry Baggen @ elektormagazine.com:

Magnetic random-access memory (MRAM) is faster, more efficient and more robust than other data storage media. MRAM stores data by making clever use of electron spin – a sort of gyroscopic property of electrons. Because it used magnetism instead of stored charge, MRAM is nonvolatile, which means that the stored data can survive a power outage. MRAM also uses much less current. However, high peak currents are necessary to flip the electron spins in the right direction to store the data.

Current bending yields low-power magnetic memory – [Link]

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