EPC2216 – 15 V GaN Power Transistor

11 October, 2021

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The EPC2216 from Efficient Power Conversion is a GaN Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 15 V, Drain Source Resistance 20 to 26 milli-ohm, Continous Drain Current 3.4 A, Pulsed Drain Current 28 A.

Specifications

Configuration: Single
Gate Threshold Voltage: 0.7 to 2.5 V
Drain Source Voltage: 15 V
Drain Source Resistance: 20 to 26 milli-ohm
Continuous Drain Current: 3.4 A
Pulsed Drain Current: 28 A
Total Charge: 0.87 to 1.1 nC
Input Capacitance: 98 to 118 pF
Output Capacitance: 66 to 99 pF
Temperature operating range: -40 to +150 °C
Qualification: AEC-Q101
RoHS Compliant: Yes
Package-Type: Die
Package: BGA
Applications: High-Speed DC-DC conversion, Lidar/Pulsed Power Applications, Lidar for Augmented Reality Applications
Dimensions: 0.85 x 1.2 mm

more information: https://epc-co.com/epc/Products/eGaNFETsandICs/EPC2216.aspx

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Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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