Fujitsu Semiconductor FRAM (Ferroelectric Random Access Memory)

Fujitsu Semiconductor FRAM (Ferroelectric Random Access Memory)

Fujitsu Semiconductor FRAM (Ferroelectric Random Access Memory) is a non-volatile memory featuring fast writing speed operation, high read/write endurance and low power consumption. These features make FRAM ideal for applications requiring continuous data logging, real-time recording of three-dimensional position information, and data protection from sudden power outages.

Fujitsu Semiconductor FRAM is offered in serial (SPI and I2C interfaces) and parallel (parallel interface) variants and in a wide range of compact, high-density package types. Memory size options are available from 4Kbit up to 8Mbit.

Features

  • Non-volatile
    • Stored data is not lost at power off
    • No battery is needed for data retention
  • Low power consumption
    • No booster circuit is required for a write operation
    • 92% lower write power consumption than EEPROM
    • No data retention current required to retain data
  • High read/write cycle endurance
    • Guarantees 10 trillion (1013) read/write cycles
    • 10 million times of EEPROM’s endurance
  • Fast write speed
    • Can overwrite data without an erase operation

more information: https://www.fujitsu.com/jp/group/fsm/en/products/fram/

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Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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