Gallium Nitride FETs from Nexperia are efficient and effective high-power FETs

Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of Nexperia’s normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design.

Key features

• V_DS : 650 V
• Threshold voltage: +4 V
• Transient over voltage V DS : 800 V
• V_GS range: 20 V

Benefits

• Easy to drive
• Inherently safe against parasitic turn on
• Reduced losses in reverse conduction mode
• Ultra low Qrr for fast switching
• Transient over voltage capability
• Robust gate oxide

more information: www.nexperia.com

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