GaN Systems GS-065-060-3 650V Enhancement Mode GaN (Gallium Nitride) Transistor is a power transistor optimized for high current, high voltage breakdown, and high switching frequency. The GS-065-060-3 features an Island Technology® cell layout, reducing the size of the device while transferring substantially more current using on-chip metal. GaNPX® packaging enables low inductance and low thermal resistance in a small package. These features combine to provide very high-efficiency power switching.
The GaN Systems GS-065-060-3 650V Enhancement Mode GaN Transistor is offered in two variants. The GS-065-060-3-B is a bottom-side cooled transistor, while the GS-065-060-3-T is a top-side cooled transistor. Both devices provide very low junction-to-case thermal resistance for demanding high-power applications.
Features
- Enhancement mode power transistor
- 650V drain-to-source voltage (VDS)
- 25mΩ drain-to-source on-resistance (RDS(on))
- 60A continuous drain current (IDS)
- Simple gate drive Requirements (0V to 6V)
- -20V/+10V gate-to-source voltage-transient (VGS(transient))
- >10MHz switching frequency
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Dual gate pads for optimal board layout
- -55°C to +150°C operating junction temperature (Tj)
- 0.27°C /W junction-to-case thermal resistance (RΘJC)
- Package
- GS-065-060-3-B: Bottom-cooled, low inductance GaNPX package
- GS-065-060-3-T: Top-cooled, low inductance GaNPX package
- Dimensions
- GS-065-060-3-B: 11.0mm x 9.0mm x 0.45mm
- GS-065-060-3-T: 9.2mm x 7.8mm x 0.49mm
- RoHS 3 (6+4) compliant
more information: https://gansystems.com/gan-transistors/gs-065-060-3-b/