GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Features & benefits

• Simplified driver design as standard level MOSFET gate drivers can be used:
  • 0 V to 12 V drive voltage
  • Gate threshold voltage V_GSth of 4 V
• Robust gate oxide with ±20 V VGS rating
• High gate threshold voltage of 4 V for gate bounce immunity
• Low body diode Vf for reduced losses and simplified dead-time adjustments
• Transient over-voltage capability for increased robustness
• CCPAK package technology:
  • Improved reliability, with reduced R_th(j-mb) for optimal cooling
  • Lower inductances for lower switching losses and EMI
  • 175 °C maximum junction temperature
  • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
  • Visual (AOI) soldering inspection, no need for expensive x-ray equipment
  • Easy solder wetting for good mechanical solder joints

Applications

• Hard and soft-switching converters for industrial and datacom power
• Bridgeless totempole PFC
• PV and UPS inverters
• Servo motor drives

more information: https://www.nexperia.com/products/gan-fets/GAN039-650NTB.html

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