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GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal runaway. The 3300V SiC MOSFETs deliver low conduction losses at all temperatures, allowing superior robustness and system reliability.
Features
- Softer RDS(ON) v/s temperature dependency
- LoRing™ – electromagnetically optimized design
- Smaller RG(INT) and lower QG
- Low device capacitances (COSS CRSS)
- Industry-leading UIL and short-circuit robustness
- Robust body diode with low VF and low QRR
- Normally off-stable temperature up to 175°C
- Optimized package with separate driver source pin
Applications
- Traction
- Solar string inverters
- EV- fast chargers
- Pulsed power
- Switched-mode power supply
- Energy storage
- Solid-state transformers
- Solid-state circuit breakers
more information: https://www.genesicsemi.com/sic-mosfet/G2R1000MT33J/G2R1000MT33J.pdf
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