login
This is the image preview of the following page:
IBM scientists achieve storage memory breakthrough
For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM). The current memory landscape spans from venerable DRAM to hard disk drives to ubiquitous flash. But in the last ... Read More
Image Downloads:
- full (720x433)
- thumbnail (150x150)
- medium (300x180)
- medium_large (640x385)
- large (640x385)
- 1536x1536 (720x433)
- 2048x2048 (720x433)
- re_large (720x433)
- re_xxmedium (290x230)
- re_xmedium (359x236)
- re_medium (420x320)
- re_a_xsmall (186x174)
- re_xsmall (125x96)
- menu-24x24 (24x14)
- menu-36x36 (36x22)
- menu-48x48 (48x29)
- crp_thumbnail (292x236)
- sendpress-max (600x361)
- woocommerce_thumbnail (300x225)
- woocommerce_single (600x361)
- woocommerce_gallery_thumbnail (100x100)
- wp_rp_thumbnail (150x150)
- wp_rp_thumbnail_prop (150x90)
RELATED POSTS
9 August, 2017 TI packages DLP Pico projector display tech for “any low-cost processor”
31 October, 2018 Geniatech’s XPI-S905X Board supports HDMI 2.0 and optional M.2 slot
29 July, 2015 Simple circuit lets you characterize JFETs
24 November, 2021 Arduino 3-Digit 0.5″ Common Cathode 7 Segment Display Module
13 April, 2016 Panelizing and Gerber Generation in Eagle
21 January, 2020 3D silicon-integrated microcapacitors have unprecedented performance
