The 2ED24427N01F is a dual-channel ±10 A driver (typical) in a SOIC-8 package with a power pad for increased thermal efficiency
The 2ED24427N01F is a dual-channel ±10 A driver (typical) in a SOIC-8 package with a power pad for increased thermal efficiency. It includes one enable pin for both channels and under-voltage lockout (UVLO) protection that is compatible (11.5 V) with IGBTs and MOSFETs.
The 2ED24427N01F is ideal for higher power or faster switching systems and can be used to drive paralleled IGBTs or MOSFETs in different applications such as interleaved PFC, Industrial Drives, Synchronous Rectification, and as transformer driven applications used in power conversion applications such as Industrial SMPS and UPS.
Key features
Additional benefits
- Enables higher power applications with a single device that would typically require at least two competing devices with 4 A to 6 A source and sink drive capability
- Enables higher frequency applications to help reduce system BOM cost enabling the use of smaller and less expensive passive components
- The power pad enables higher power density by efficiently dissipating heat to the PCB ground plane.
Applications
- Industrial drives
- DC-DC
- Fast EV charging
- Motor control and drives
- Power Management (SMPS)
more information: https://www.infineon.com/cms/en/product/power/gate-driver-ics/2ed24427n01f/
It looks like this part is in high demand for the time after examining available stocks. With the capability of driving switching components at such high output, multiple switches, increased efficiency, the release of this IC will definitely improve circuit design, layout, reduced component count and overall space requirements. It will be a welcome item in E vehicles among many other applications. I may even order some for myself to work with. It will make building H Bridges and parallel high current switches much easier for sure.