ON Semiconductor NTx015N065SC1 silicon carbide MOSFET

Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology. This enables higher current density, lower capacitance hence faster-switching frequency, and low ON-resistance at a device level. Benefits for systems employing Silicon Carbide devices are consequently reduced losses, higher temperature operation, and optimized system size & weight performance.

Key features

• Rated to 650 V
• Typical RDS(ON) of 15 mΩ
• D2PAK and TO247 Packages
• Industrial and Automotive Grade versions

Additional features

• Superior characteristics over conventional traditional Silicon technology
• D2PAK 7-lead package
• TO247 4-lead package
• High Junction Temperature Tj = 175C
• 100% UIL Tested
• Pb-Free and RoHS Compliant
• AEC Qualified and PPAP Capable NV-suffix versions available

more information: https://www.onsemi.com/products/wide-bandgap/silicon-carbide-sic-mosfets/ntbg015n065sc1

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