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onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized MOSFET is designed with low ON resistance and ensures low capacitance and gate charge. The NTHL045N065SC1 MOSFET features high efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size. Typical applications include Switching Mode Power Supplies (SMPS), solar inverters, DC-DC converters, UPS, and energy storage.
Features
- High speed switching with low capacitance (Coss=162pF)
- Typical RDS(on)=32m @ VGS=18V
- Typical RDS(on)=42m @ VGS=15V
- 650V Drain-to-Source Voltage (VDSS)
- 66A Continuous Drain Current (ID max)
- Ultra low gate charge (QG(tot)=105nC)
- 100% avalanche tested
- High junction temperature (TJ < 175°C)
- Pb-free and RoHS compliant
more information: https://www.onsemi.com/products/discrete-power-modules/silicon-carbide-sic/silicon-carbide-sic-mosfets/nthl045n065sc1
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