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Schottky Diode

Schottky Diode

The Schottky diode is a semiconductor diode formed by the junction of metal with the semiconductor material. It is named after the German physicist W. H. Schottky. The Schottky diode is also known as a hot-carrier diode and Schottky barrier diode. It has a low forward voltage drop and high switching speed. It is used in a variety of switching, rectification, and wave-shaping circuits. They are mostly used in digital logic circuits and solar panels. The transistor-transistor logic (TTL) uses these Schottky diodes in 74S, 74LS, 74AS & 74ALS bipolar logic series.

The conventional diode comprises of PN junction which is formed by combining P-type and N-type semiconductors. It consists of both majority carriers and minority carriers in both P-type and N-type semiconductor materials. The forward biasing of conventional diode faces low resistance of PN junction and current flows through it. The typical forward voltage drop of a Silicon diode ranges from  0.7 to 0.9 V. In reverse biasing, the PN junction diode offers high resistance and a small leakage current flows through it. This characteristic is especially useful in rectification and switching applications. The characteristic of the PN junction diode is non-linear because the DC resistance offered by the junction changes with the voltage and current applied to it in forward and reverse-biasing conditions.

The IV-Characteristic of a conventional diode is shown below. The diode starts conducting when the external biasing voltage applied exceeds the knee voltage (VK) in forward biasing. The silicon diodes have knee voltages in the range of 0.6 to 0.9 Volts, whereas, Germanium diodes have knee voltages around 0.3 volts. From IV-Characteristic it is clear that conventional diode offers resistance to a greater extent in reverse biasing and a negligible amount of leakage current flows until breakdown occurs.

Conventional diode IV Characteristic
Figure 1: A typical I-V Characteristic of a conventional PN junction diode

Whereas, the Schottky diodes offer less forward voltage drop and fast switching action as compared to conventional diodes. These Schottky diodes can be used in a variety of applications similar to that of conventional diodes especially in solar panels, and digital logic circuits, etc.  The Schottky diodes are formed by bonding the metal electrode with the N-type semiconductor instead of the P-type semiconductor. Due to this bonding of a compound metal with the N-type material, there exists no depletion layer which classes them as a unipolar device.

Construction and Working Principle

The semiconductor used in N-type material of Schottky diode is lightly doped and a highly conductive material compound is used to bond with it. The metal compound used is Silicide which is a highly conductive metal compound. The absence of depletion layer and low metal resistance give characteristics of very low forward voltage drop to the Schottky diode. The forward voltage drop (VF) of the Schottky diode is less than 0.4V and different voltages can be achieved by manufacturing Schottky diodes with different metal compounds.

Construction and symbol of Schottky diode
Figure 2: Construction and symbol of a Schottky diode

The metal-semiconductor (MS) junction can be biased in forward and reverse directions similar to a conventional PN junction diode. In the forward bias condition, the external voltage source pushes the electrons towards the metal electrode. The electrons flow from N-type to metal compound and constitute majority carriers. The drift current in Schottky diodes is due to these majority electrons. However, in the reverse bias condition, there is no current flow due to the absence of P-type semiconductor material. The absence of minority carriers (holes) gives characteristics of rapid response to the biasing change and current quickly to halt/stop. This leads to the fast switching action of the Schottky diode and demonstrates a basic rectification technique. The characteristic of a typical Schottky diode is shown in the following figure. It is eminent from the figure that the knee voltage of a Schottky diode is much lower compared to a conventional diode. However, the characteristic curve is similar to that of the conventional diode in the forward region only. A difference of around 0.3 V exists between knee voltages of a conventional and Schottky diode.

I-V Characteristic comparison of Schottky and conventional diode
Figure 3: Comparison of I-V Forward Characteristic of Schottky and conventional diode



The low voltage drop across the Schottky diode produces more forward current and that may be multiple of a typical PN junction diode current. As discussed before, the voltage drop across the Schottky diode depends on the metal compound mainly and could offer a variety of voltage drops depending on the metal compound. The lower voltage drop causes less power drop (V x I) across the diode even though the current has increased and as such the heating due to power loss also reduces. All these properties, make Schottky diodes suitable for applications requiring low voltage drop and high current such as in solar panels which have been discussed in a previous article.

However, the reverse leakage current of the Schottky diode is much larger compared to that of the conventional PN junction diode.

The Schottky diodes are expensive due to metal-semiconductor construction compared to that of PN junction diodes of the same ratings. The commercially available Schottky diode series is 1N568xx with a 1-ampere current rating.

An ohmic contact is a form of Schottky diode where the N-type semiconductor is heavily doped in order to reduce contact resistance significantly. This also leads to more linear and non-rectifying characteristics. The ohmic contacts are used to connect semiconductor wafers with the external wires, circuits, or systems. The pins of the dual-in-line (DIL) package are an example of ohmic contacts which connect semiconductor wafers of the chip with an external circuit.

Schottky Diodes based Logic Gates

There are many integrated circuit families available in the market to perform logic operations such as Bipolar, CMOS, and BiCMOS, etc.  The bipolar family uses bipolar devices such as diodes and transistors for the logic circuit operations. The Schottky diodes are found in 74 series of bipolar logic families. The conventional transistor-based TTL logic circuit suffers from power loss and slow switching speed. The inclusion of Schottky diode as clamping diode has brought low power loss, high-frequency response, and reduced switching time to logic circuits.

There many subfamilies of bipolar TTL logic circuits which include the Schottky diode and a few of them are listed below:

  • 74S – Schottky (High Speed): The Schottky diode is used as a clamp at the base-collector junction of TTL to prevent charge storage/ saturation. This arrangement, compared to the 74 and 74H series, gives faster operation but costs higher and dissipates more power.
  • 74LS – Low-power Schottky: This series is based on the 74S series but manufactured to offer lower power loss at a slower switching speed. They tend to give a 10ns gate delay with 2mW of dissipation.
  • 74AS – Advance Schottky: This is the improved version of the 74S series. It includes “miller killer” circuitry to offer greater speed at high power consumption. The low-to-high transition gate delay is around 1.7ns at 8mW of power loss.
  • 74ALS – Advanced low-power Schottky: This is an improved version of the 74LS series and gives reduced power dissipation at slightly slow switching action. They have 4ns of gate response and 1.2mW of power loss.
Schottky diode clamped to transistor
Figure 4: The Schottky clamped transistor

The aforementioned families include a Schottky clamped to a transistor to prevent charge storage or to prevent saturation of the transistor. The prevention of a transistor to operate in saturation gives decreased propagation delay time. It is known that the increase in base current drives the transistor towards saturation and the response may gradually get delayed. The placement of the Schottky diode across the Base – Collector prevents driving of transistor into saturation. When the transistor is operating in the active region then the collector-base junction is reverse biased and as such the Schottky diode. However, an increase in base current leads to the development of voltage across the Schottky diode and drives it to operate in the forward region. This clamps the base-collector junction to Schottky diode knee voltage i.e. 0.4V and would prevent saturation of transistor by shunting excess current through the diode itself.

The Schottky clamped TTL families are used in oscillators, memories, and flip-flops, etc.

Conclusion

  • The Schottky diode is a solid-state semiconductor device formed by bonding the metal electrode with the N-type semiconductor.
  • The metal-semiconductor (MS) junction has no depletion layer around it and this characterizes the Schottky diode with fast switching response and reduced forward voltage drop.
  • The MS junction Schottky diodes have forward voltage drops in the range of 0.2 to 0.4 volts which are much lower than the forward voltage drops produced by conventional PN junction diodes (0.6 to 0.9 volts for Silicon diodes).
  • Contrary to PN junction diodes, the leakage current in Schottky diodes is much greater and they have much lower breakdown voltages.
  • The Schottky diodes are used in applications requiring high current, low forward voltage drop, and reduced switching time such as in digital circuits, renewable energy sources and solar panels, etc.
  • The Schottky diodes are used in bipolar logic circuits because of their fast-switching response which is in few nanoseconds (ns) and their reduced power dissipation capability. The subfamilies of bipolar TTL logic which are based on Schottky diodes are 74S, 74LS, 74AS, and 74ALS.
  • All subfamilies, 74S, 74LS, 74AS, and 74ALS, use Schottky diode clamped to the transistor and the main difference amongst these subfamilies is the tradeoff between switching time & power dissipation. However, the most commonly used TTL subfamily is 74LS.
  • The MS junction is also used as an ohmic contact and for this purpose, a heavily doped N-type semiconductor is used. The resistance of the MS junction is significantly reduced for ohmic contact. The response of the MS junction becomes linear and is used in integrated circuits to connect semiconductor wafers with the external world.

Stereo Balanced to Unbalanced Audio Converter

The primary role of this project is to convert a differential input audio signal into a single-ended output signal while rejecting noise that is common to both inputs (common-mode noise).

The circuit presented here is a differential amplifier intended to receive balanced line inputs in audio applications requiring a high level of noise immunity and optimum common-mode rejection. The circuit typically achieves an extremely high common-mode rejection ratio (CMRR) of 91 dB while maintaining an ultra-low THD+N of –120 dB at 1 kHz for 22-dBu signal levels. Precision matching of on-chip resistors gives the circuit an excellent CMRR performance. Operating supply range +/-12V to +/-15V. Connection of a stereo balanced line input via 2 x female XLRs to a stereo unbalanced output on RCA connectors. The circuit includes D1 power LED, Ferrite beads L1, L2 on the supply line to provide noise immunity. Ferrite Beads at input signals to reduce the RFI/EMI noise.

Features

  • Supply +/-12V to +/-15V DC @ 40mA
  • 2 x Female XLR Connector for Balanced Audio Input
  • 2 x RCA Connector Single-Ended Audio Output
  • EMI circuit on inputs reduce the noise
  • High Input Impedance: 1-MΩ Differential
  • Short-Circuit Protection -Chip
  • D1 Power LED
  • PCB Dimensions 72.07 x 47.47 mm

Schematic

Parts List

NOQNTY.REF.DESCMANUFACTURERSUPPLIERSUPPLIER PART NO
11CN14 PIN MALE HEADERWURTHDIGIKEY732-5317-ND
22CN2,CN4XLR FSWITCH CRAFTDIGIKEYSC1906-ND
32CN3,CN5RCACUI DEVICESDIGIKEYCP-1459-2-ND
46C1,C4,C6,C8,C9,C1110uF/50V SMD SIZE 1206MURATA/YAGEODIGIKEY
52C2,C50.1uF/50V SMD SIZE 0805MURATA/YAGEODIGIKEY
64C3,C7,C10,C1210uF/50V NON POLARNICHICONDIGIKEY493-10835-3-ND
76C13,C14,C15,C16,C17,C18100PF/50V SMD SIZE 0805MURATA/YAGEODIGIKEY
81D1LED SMD SIZE 0805LITE ONDIGIKEY160-1427-1-ND
96L1,L2,R14,R15,R16,R17F-BEAD SMD SIZE 0805TDKDIGIKEY445-6180-1-ND
101R11K 5% SMD SIZE 0805MURATA/YAGEODIGIKEY
117R2,R3,R5,R6,R7,R8,R10100K 5% SMD SIZE 0805MURATA/YAGEODIGIKEY
122R4,R949.9E 1% SMD SIZE 0805MURATA/YAGEODIGIKEY
131R110E SMD SIZE 0805MURATA/YAGEODIGIKEY
142R12,R131M 5% SMD SIZE 0805MURATA/YAGEODIGIKEY
151U1INA1650TIDIGIKEY296-45339-1-ND

Connections

Gerber View

Photos

 

Video


INA1650 Datasheet

PrizmaCap SuperCapacitors launched

Posted on by mixos

AVX Corporation, a leading manufacturer and supplier of advanced electronic components and interconnect, sensor, control, and antenna solutions, has launched a superlative new series of standard and custom supercapacitors engineered to provide peak performance in an array of SWaP-optimized, battery-powered products. The new SCP Series PrizmaCap™ supercapacitors have the widest operating temperature range of any supercapacitor technology currently available on the market (-55°C to +90°C), the highest capacitance (3.5–15F) and energy density (1.14–2.43Wh/kg) of any small form factor (SFF), prismatic, electric double-layer capacitor (EDLC) rated for more than 1F currently available on the market, and an extremely lightweight (<2g) and low-profile form factor (0.8–2mm) based on propylene carbonate electrolyte technology, which has been proven safe and effective in energy storage applications including lithium-ion batteries.

AVX’s new SCP Series PrizmaCap supercapacitors can be used alone or in conjunction with primary or secondary batteries to extend backup time, improve battery life, and provide instantaneous power pulses in energy storage, energy and power holdup, pulse power handling, and battery assist applications within a range of consumer, commercial, and industrial electronics that prioritize size, weight, and power (SWaP) optimization. The series is especially well suited for use in end products including wearable and handheld devices, industrial equipment, wireless keyboards, power peripherals, tablets, and e-readers.

SCP Series PrizmaCap supercapacitors are currently available in three standard form factors with a 48 x 45mm footprint, one of three ultralow height profiles: 0.8mm, 1.3mm, or 2.0mm, and two fixed-position, surface-mount terminals compatible with hand soldering or — for more reliable connections — AVX Interconnect’s economical and ultralow-profile 70-9159 Series STRIPT™ two-piece, single contacts. These three standard solutions (SCPB08A355SNA, SCPB13A855SNA, and SCPB20A156SNA) are rated for up to 15F capacitance, 2.1V electrical potential from -55°C to +65°C, 8.63A peak current, and 2.43Wh/kg energy density, and have the widest operating temperature range of any supercapacitor technology currently available on the market, -55°C to +90°C, with appropriate derating to 1.1V. They are also rated for maximum DCL as low as 50μA after 72 hours of operation, maximum ESR as low as 30mΩ at 1kHz and 55mΩ at DC, and up to 2,582W/kg power density and 0.0092Wh maximum energy. Additional off-the-shelf solutions with standard footprints and capacitance values will be released as they are qualified, and custom SCP Series PrizmaCap supercapacitors are available with customer-specified footprints and capacitance values spanning 1–500F.

“Our new SCP Series PrizmaCap supercapacitors have a revolutionary new design in terms of form, fit, and function compared to other AVX supercapacitors, and they leverage this innovative design to deliver the highest capacitance and energy density of any currently available, small form factor, prismatic, EDLC supercapacitor rated for more than one Farad, as well as the widest range of rated operating temperatures — including both the highest and lowest extremes — of any supercapacitor technology currently available on the market,” said Eric DeRose, global product manager – Supercapacitors, AVX. “The new PrizmaCaps also have an extremely lightweight and ultralow-profile package that’s compatible with both solder and interconnect termination processes for added design flexibility and ideal for use in compact consumer, commercial, and industrial electronics with densely populated PCBs and stringent SWaP demands.”

AVX’s new SCP Series PrizmaCap supercapacitors are RoHS- and REACH-compliant, lead-free compatible, and currently made in the USA. They are also fully tested for life cycle, high-temperature load life, temperature characteristics, vibration resistance, and humidity characteristics prior to being packaged and shipped in trays to ensure optimal performance. The Standard lead-time for the series is currently 16 weeks.

For more information about AVX’s new SCP Series PrizmaCap supercapacitors, please visit https://www.avx.com/products/supercapacitors/prizmacap-scp-series/. For immediate availability, please visit Mouser Electronics.

For all other inquiries, please visit www.avx.com, email inquiry@avx.com, follow them on LinkedIn, Twitter, and Instagram, like them on Facebook, call 864-967-2150, or write to One AVX Boulevard, Fountain Inn, S.C. 29644.

New R&S RTO6 oscilloscopes from Rohde & Schwarz deliver instant insights thanks to enhanced usability and performance

Posted on by mixos

Rohde & Schwarz takes its successful R&S RTO family to the next level with the all-new and redesigned R&S RTO6 oscilloscope. Featuring an updated user interface on a larger, 15.6-inch Full HD touchscreen and straightforward workflows, it speeds up daily measurement tasks. The R&S RTO6 delivers deep insights into designs on the engineer’s workbench with state-of-the-art specifications such as an outstanding 9.4 ENOB, an unparalleled update rate of one million waveforms per second as well as a comprehensive toolset of analysis functions.

Today, Rohde & Schwarz introduces the next generation of its R&S RTO 6 GHz class oscilloscope. The new R&S RTO6 digital oscilloscope offers six different bandwidth models from 600 MHz to 6 GHz and a sample rate of up to 20 Gsample/s. The fully integrated test solution for the time and frequency domain, as well as protocol and logic analysis, supports design engineers from all industries. The instrument features a high waveform update rate, excellent signal fidelity, a uniquely powerful digital trigger and responsive deep memory.
Improved usability for instant insights

When developing the new R&S RTO6 oscilloscope, Rohde & Schwarz engineers focused on improving the oscilloscope’s everyday usability. They achieved this with a newly designed user interface for increased productivity. The 15.6-inch Full HD screen, with an easy-to-use touch functionality and a redesigned front panel, enables test engineers to quickly set up measurements. The significantly larger screen can display a maximized waveform viewing area, and signals can be dragged and dropped to different parts of the screen with the tried and tested R&S SmartGrid. The app cockpit provides access to all of the oscilloscope’s applications with a single tap.

State-of-the-art specifications for in-depth information

The developers of the new R&S RTO6 have implemented an architecture with a dedicated ASIC for optimized signal processing that delivers an exceptional acquisition rate of up to one million waveforms per second. This allows users to reliably detect even sporadic signal faults. A low-noise frontend and single-core A/D converters with extremely small linearity errors achieve excellent signal integrity with a spurious-free dynamic range (SFDR) of 65 dBc and an outstanding 9.4 ENOB. This allows users to capture all signal details with maximum precision.

Even more signal details can be revealed using the high definition (HD) mode. This increases the vertical resolution of the R&S RTO6 oscilloscopes up to 16 bit with digital filtering, resulting in sharper waveforms and less noise. This filtered 16-bit signal is also used by the patented digital trigger system from Rohde & Schwarz. This allows the R&S RTO6 to achieve unprecedented trigger sensitivity and the capability to isolate even the smallest signal details.

In addition, the R&S RTO6 has several features that provide users with quick results. Mask tests, which users can set up with simple touch gestures, allow signal anomalies to be easily identified within defined tolerance limits. Thanks to the unique zone trigger, events can be graphically isolated in both the time and frequency domain.

With a standard acquisition memory of 200 Mpts and an optional 2 Gpts per channel, the R&S RTO6 can analyze long pulse and protocol sequences without difficulties. The constantly enabled history mode also allows previous trigger events to be analyzed, while comprehensive search functions further simplify this task.

Comprehensive tools for fast and accurate results

More than 90 measurement functions are included in the R&S RTO6 series, organized into amplitude and time measurements, jitter, eye, histogram and spectral measurements. In addition, multiple application-specific software options for complex measurements are available, and users can easily unlock them with a keycode as their testing requirements evolve, even after purchasing the instrument. These options include triggering and decoding of serial protocols, automated compliance tests on high speed digital interfaces, detailed options for jitter analysis and power analysis, as well as spectrum, power, TDR/TDT and signal analysis. Furthermore, an extensive probe portfolio is available from Rohde & Schwarz to support all measurement tasks with the R&S RTO6. Thanks to its extensive toolset, the R&S RTO6 covers a multitude of applications, ranging from EMI debugging and spectrum analysis to automotive Ethernet testing and serial bus analysis, as well as power electronics testing and digital design.

Over ten years of oscilloscope innovation

In 2010, Rohde & Schwarz, known for its RF testing solutions, expanded into the time domain with the launch of its first generation R&S RTO. Since then, the newcomer’s portfolio has grown into eight oscilloscope families, from entry-level to high-performance. Dr. Andreas Werner, Vice President Oscilloscopes at Rohde & Schwarz, says, “Today, we begin a new chapter with the introduction of the R&S RTO6. Our development engineers have once again rethought everything to make a better oscilloscope for experienced and new users alike. The R&S RTO6 combines profound technical experience with substantial application knowledge, taking Rohde & Schwarz oscilloscopes to the next level.”

The new R&S RTO6 is now available from Rohde & Schwarz as a four-channel base instrument with bandwidth options of 600 MHz, 1 GHz, 2 GHz, 3 GHz, 4 GHz and 6 GHz. For more information, visit www.rohde-schwarz.com/product/rto6

Arduino UNO-like AB32VG1 Development Board based on RISC-V MCU

Posted on by Abhishek Jadhav

AB32VG1 Development Board

Recently, there have been several developments in the RISC-V community with its increasing use case in various domains. We have seen this open-source technology grow at an impressive rate, catching the eye of the makers’ community to implement extraordinary projects. To help them, a RISC-V member Chinese chip design manufacturer known for its high-performance Bluetooth speakers and headsets, Bluetrum has announced AB32VG1 Development Board based on its 32-bit RISC-V AB5301A MCU clocked up to 120 MHz for audio applications.

One of the major advantages of increasing RISC-V adoption is the modular architecture that allows the design picking choose the extension required along with the base instruction set. Due to this, the designer only adds the required extensions that can be for vector or floating-point among the several. The manufacturer has not provided much information on the extensions, but the CPU is a 32-bit RISC-V core.

AB32VG1 Development Board Front View
Image Credit: Hackster

Features of AB32VG1 Development Board

  • CPU: Bluetrum AB5301A RISC-V MCU clocked up to 120 MHz
  • Flash memory: 1MB flash with TF card slot
  • Wireless Connectivity: Bluetooth 5.0, BLE and FM radio
  • Expansion Headers: 1x I2C, 6x ADC, 6x PWM
  • Power Supply: 5V via USB Type-C or Vin pin on the expansion header
  • Dimension: 9cm×6cm

According to the datasheet available in English, the CPU is integrated with 32-bit RISC-V MCU that can be over-clocked up to 192 MHz with 192KB RAM and 1MB flash storage. As we have all used Arduino UNO, the AB32VG1 development board comes in the same form factor as Arduino UNO but a RISC-V MCU at its heart. This gives tough competition to the most popular ARM-based development board. The board comes with similar GPIO headers that give access to an I2C, six ADC, and six PWM connections.

AB32VG1 Development Board SOC

When it comes to wireless connectivity, the development board supports Bluetooth 5.0 and BLE specifications and is equipped with an FM radio. The board also features a TF card for extra storage required as per the requirements of the user. To power the board, you can use 5V via USB Type-C or Vin pin on the expansion header. This is open-source hardware with all the schematics and BOM available on Gitee where the users can take a look. However, it is important to note that the microcontroller is an in-house tape out and there is no detailed information regarding it.

For more details, you can visit the Gitee page and you can buy the product on Taobao for 79.90 Yuan.

ADLINK’s CM5-P1000 Features NVIDIA Quadro P1000 GPU

Posted on by Saumitra Jagdale

ADLINK Technology CM5-P1000

We saw ADLINK releasing the industry’s first embedded MXM graphic modules based on NVIDIA’s Turing architecture, to accelerate edge AI inference in SWaP-constrained applications. Now, ADLINK Technology has come up with CM5-P1000, the world’s first COTS PC/104 module to feature NVIDIA’s Quadro P1000 GPU. It primarily targets AI-enabled mission-critical applications. Measuring just 116 x 96 mm, CM5-P1000 comes with PCIe/104 Type 1 format. It also offers the latest and leading-edge GPU benefits for your embedded system.

The CM5-P1000 comes with a compact form factor and its energy efficiency makes it suitable for the size, weight, and power (SWaP) restrictions required by aerospace and defense applications. The module’s high-performance processing power thus opens up many options for building various use cases and applications. These include radars, intelligence, surveillance and reconnaissance (ISR), unmanned ground vehicles (UGV), unmanned aerial vehicles (UAV), and missile systems, etc. Other applications include factory automation and process control.

Processing Capability of ADLINK’s CM5-P1000

The CM5-P1000 is another step forward in ADLINK’s mission to bring NVIDIA graphics to embedded form factors. The NVIDIA Quadro P1000 Graphic Processing Unit (GPU) provides 640 CUDA cores and 1.8TFLOPS performance to the module. The GPU’s maximum power consumption, or TDP, is 47W. Adlink’s Coffee Lake-based Matrix computers are also one of the P1000-compatible Adlink systems.

Discussing further, the module comes with four ultra-high definition (UHD) DisplayPort outputs as well as a PCIe Gen3 interface with a 16 lane configuration. Additionally, this board features 4GB of GDDR5 embedded memory with a 128-bit memory width. Moreover, it also offers 96GB/s maximum memory bandwidth. The module is compatible with both Windows 10 and 64-bit Linux operating systems.

Functional Diagram of CM5-P1000

“Engineers serving the aerospace and defence sector need access to embedded technology that offers a combination of elevated performance, small form factor, and ongoing reliability. Long-term supply chain continuity must also be assured,” said Eric Kao, General Manager of ADLINK’s Networking, Communication & Public Sector business unit.”

ADLINK’s CM5-P1000 is designed to maintain uptime in even the most challenging of working environments. Hence, it can withstand extreme temperatures, high altitudes, shocks, and vibrations. The CM5-P1000 can operate in a flexible temperature range from -40 to +85˚C and offers 96% humidity tolerance. For more information about the module, visit the official product page.

Analog Devices launched two Ethernet chips for up to 1.7km distance communication

Posted on by DM

Ethernet cables are commonly applicable in local area networks (LANs) and wide-area networks (WANs). The ethernet cables support higher bit-rates and longer link distance than other wired LAN technologies such as ARCNET and Token Ring. Ethernet cables are practical when wiring your house. But if you want to connect corporate campuses with them, fiber optics are a better choice to get around the limits of Ethernet cable. There are a few different versions of ethernet cable, but they all have a maximum distance of 90-100 meters. This limit is because the faster we push data, the more sensitive the data becomes to degradation. With lower bit rates up to 100 Mbps or 10 Mbps, we can get a much longer cable. Ethernet cables with a bandwidth of 100 Mbps are tested to go further at 400+ feet with no errors.

A new ethernet physical layer standard (IEEE 802.3cg-2019) was approved by the IEEE on November 7, 2019, to allow for cables over one kilometer using a single twisted-pair cable. These new variants of ethernet cables support ten megabits per second Ethernet over a single twisted pair. The 10BASE-T1L ethernet standard is preferred for long-range industrial IoT applications as well as short-distance applications where substantial electrical noise is present.

Analog Devices has launched two 10BASE-T1L Ethernet chips with ADIN1100 Ethernet PHY and ADIN1110 Ethernet MAC-PHY. The chips are compliant with the IEEE 802.3cg Ethernet standard. The ADIN1100 is a robust low-power single port 10BASE-T1L transceiver designed for long-range industrial applications.

It integrates an Ethernet PHY core with all the associated analog circuitry, input and output clock buffering, the management interfaces control register and subsystem registers, and the MAC interface and control logic to manage the reset and clock control and pin configuration. The chip has 1V peak to peak operation mode, independent Rx/Tx pins, external termination resistors for intrinsic safety applications.

ADIN1100 Block Diagram. Source: https://www.analog.com/en/products/adin1100.html#product-overview

ADIN1100 features:

  • 10BASE-T1L IEEE® Std 802.3cg-2019™ compliant
  • Supports 1.0 V pk-pk & 2.4 V pk-pk transmit levels
  • Auto-Negotiation capability
  • Supports intrinsic safety applications
  • MII, RMII & RGMII MAC interfaces
  • MDIO Management Interface
  • Unmanaged configuration using pin strapping including:
    • Master/Slave selection
    • Transmit amplitude
    • PHY address
  • 25 MHz crystal oscillator/25 MHz external clock input (50 MHz external clock for RMII)
  • Single supply 1.8 V/3.3 V operation (model dependent)
  • EMC test standards
    • IEC 61000-4-4 electrical fast transient (EFT) (±4 kV)
    • IEC 61000-4-2 ESD (±8 kV contact discharge)
    • IEC 61000-4-2 ESD (±15 kV air discharge)
    • IEC 61000-4-6 conducted immunity (10 V)
    • EN55032 radiated emissions (Class A)
  • Cable Reach
    • 1700 meters+ with 1.0 V pk-pk
    • 1700 meters+ with 2.4 V pk-pk
  • Low power consumption
    • Single supply 1 V pk-pk – 45 mW typ
    • Dual supply 1 V pk-pk – 39 mW typ
    • Single supply 2.4 V pk-pk – 109 mW typ
    • Dual supply 2.4 V pk-pk – 81 mW typ
    • Triple supply 2.4 V pk-pk – 75 mW typ
  • 3.3 V/2.5 V/1.8 V MAC interface VDDIO supply
  • Integrated power supply monitoring and POR
  • Start of packet detection for IEEE 1588 timestamp support
  • Diagnostics
    • Frame Generator and Checker
    • Multiple Loopback Modes
    • IEEE Test Mode Support
    • Cable Diagnostics
  • Link/Activity LED
  • Small package 40-lead (6 mm x 6 mm) LFCSP
  • Industrial temperature range -40°C to 105°C

The ADIN1100 transceiver chip enables up to 1.7km long ethernet cables for applications like Process Control, Factory Automation, and Building Automation. The ADIN1100 is available in a 6 mm x 6 mm 40-lead package. Further, no additional software, no customized TCP/IP stack and no special drivers are necessary for 10BASE-T1L ethernet cables.

More information about the chip is available on the ADIN1100 product page.

IBASE Adds a New Line of Intel® Atom-based Railway Computing Solutions

Posted on by mixos

IBASE Technology Inc., a leading provider of embedded computing solutions, unveils a new range of railway computing systems integrated with the Intel® Atom™ quad-core E3950 processor (formerly Apollo Lake) which offers up to 1.5x CPU and 3x graphics performance over the previous generation Atom™ E3845 CPU.

Designed to meet railway compliance regulations and for rolling stock environment, these EN50155-certified products include the 15” MPPC1501PC and the 10.4” MPPC1001PC panel PCs plus the MPT-1000R railway computer system. Another model being launched that supports the same processor is the E-mark-certified MPT-1000V in-vehicle system. All of these Intel® Atom™ E3950-based platforms feature enhanced power efficiency, rich I/O connectivity and industrial-grade reliability that enable 24/7 operation in extended temperatures and empower real-time mission-critical applications.

IBASE’s Intel® Atom™ E3950-based Systems for Transportation Applications:

MPPC1501PC – 15-inch EN50155-Certified Panel PC

  • Onboard 4GB DDR3L (8GB max.), 128G SSD storage
  • Supports ultra-long-life LCD panel, M12 connectors
  • Supports IP65, projected capacitive touch screen
  • Supports 24V DC or 72/110V DC power input

MPPC1001PC – 10.4-inch EN50155-Certified Panel PC

  • Onboard 4GB DDR3L (8GB max.), 64G SSD storage
  • Supports ultra-long-life LCD panel, M12 connectors
  • Supports IP65, projected capacitive touch screen
  • Supports 24V DC or 72/110V DC power input

MPT-1000R – EN50155-Certified Fanless Railway Computer

  • Onboard 4GB ECC DDR3L, 64G MLCC SSD
  • Supports M12 connectors for dual GbE & USB
  • Supports SIM socket for dual WWAN
  • Supports 9V~32V DC power input

MPT-1000V – E-mark-Certified Fanless In-Vehicle Computer

  • Onboard 8GB LPDDR4 with Intel® E3950 or 4GB with N3350 CPU
  • Supports CANbus, ignition power-on signal control
  • Supports Add-on card slot reset, RTC battery quick access
  • Supports SIM socket for dual WWAN, 12V~32V DC power input

more information: www.ibase.com.tw

Thunderboard™ Sense 2: Next Generation IoT Development Kit

Posted on by mixos

Silicon Labs’ Thunderboard Sense 2 is the ultimate sensor-to-cloud and advanced IoT development kit

Silicon Labs’ Thunderboard Sense 2 is a small and feature-packed development platform for battery-operated IoT applications. This upgraded Thunderboard IoT kit features seven onboard sensors, a powerful multi-protocol EFR32 Mighty Gecko SoC with 256 kB RAM and 1024 kB Flash plus advanced BLE capabilities, and a mobile app offering Bluetooth® communication and cloud connectivity. Thunderboard Sense 2 includes an integrated debugger and is fully supported in Simplicity Studio. This development kit provides the fastest path to develop and prototype IoT edge node devices.

Thunderboard Sense 2 brings upgraded features to the family of Thunderboard IoT kits. This IoT development kit features updated sensors and the latest ERF32MG SoC with 4x Flash and RAM plus advanced BLE capabilities, getting a device connected to the cloud in minutes. This kit is perfect for rapidly developing and prototyping a wide range of IoT end-node devices at a low cost.

  • Kit Features
    • SEGGER J-Link integrated debugger
    • USB CDC virtual serial port
    • 8 Mbit SPI ultra-low power NOR Flash for local storage
    • High brightness LEDs
    • Size: 45 mm x 30 mm
    • Extendibility: 20 breakout pins
    • Simplicity Studio supported
  • Wireless Gecko – EFR32MG12 Multi-Protocol Radio
    • ARM® Cortex®-M4 core with 256 kB RAM and 1024 kB Flash
    • Low energy consumption
    • Flexible MCU peripheral interfaces
  • Mobile App
    • Mobile app for Android and iOS
    • iOS app implemented in Swift
    • Android app implanted in Native code
    • Source code available at GitHub
    • Beacon notifications
    • View sensor data
    • Control LEDs and detect button pushes
    • Stream sensor data to the cloud
  • Sensors
    • Relative humidity and temperature sensor Si7021
    • UV and ambient light sensor Si1133
    • Magnetic Hall effect sensor Si7210
    • Pressure sensor BMP280
    • Indoor air quality and gas sensor CCS811
    • 6-axis inertial sensor ICM-20648
    • TDK InvenSense ICS-43434 microphone
  • Cloud Streaming
    • Data is stored in Firebase
    • Web frontend is implemented in ReactJS
      • Using Alt.js as the flux implementation
      • D3.js for data driven charts
    • All source code available

more information: https://www.silabs.com/development-tools/thunderboard/thunderboard-sense-two-kit

Fibocom Launches 5G Module Series FG130 and FM130 Powered by Qualcomm 315 5G IoT Modem in MWC 2021

Posted on by mixos

Fibocom, a leading global provider of IoT (Internet of Things) wireless solution and wireless communication modules, launches its 5G wireless modules FG130 and FM130 during MWC 2021 (Mobile World Congress 2021). The new 5G module series is powered by the Qualcomm® 315 5G IoT Modem-RF System, aiming to advance the deployment of 5G in the IoT vertical industries and expand the new market opportunities of 5G technology in the IoT sector.

Backward compatible with LTE network standard, Fibocom FG130 and FM130 wireless module series support global frequency bands of 5G NR Sub-6GHz in standalone (SA) only mode. Compared with non-standalone (NSA), 5G SA enables lower latency, which makes it suitable for real-time and near-real-time applications such as C-V2X and AR/VR. With 5G SA supporting network slicing, Fibocom FG130 and FM130 5G modules can be applied in use cases based on different characteristics and SLA (service level agreement) requirements， including private 5G networks, smart retails, smart energy, IIoT (Industrial IoT), smart agriculture, construction, public venues, etc.

Featuring premium gigabit class performance, low power consumption and efficient heat dissipation, Fibocom FG130 and FM130 module series is a new generation of IoT solutions with high speed, powerful functions and excellent performance. Powered by the Qualcomm 315 5G IoT Modem, FG130 and FM130 allow an extended-life software and hardware maintenance, which enables longer product lifecycles for IoT terminals. Embedded with rich interfaces, FG130 and FM130 modules allow flexible customization, which can help customers transit from LTE to 5G seamlessly based on their needs while reducing development costs.

“We are pleased with the news of Fibocom launching new modules based on our 5G IoT solution, the Qualcomm 315 5G IoT modem, which will help stimulate and scale the 5G IoT industry and enable the transitions needed for Industry 4.0. This solution will help create long-lasting devices and promote the proliferation of the 5G IoT industry, allowing seamless integration for customers utilizing previous generations of connectivity,”

said Vieri Vanghi, vice president, product management, Qualcomm Europe, Inc.

“The development of the Qualcomm 315 5G IoT Modem is an exciting step forward in the proliferation of 5G in the IoT. Coupled with the Qualcomm 315 5G IoT modem, Fibocom’s FG130 and FM130 5G module series will enable reliable, safe and intelligent IoT solutions across a variety of industries and vertical applications,”

said Tiger Ying, CEO, Fibocom.

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