Renesas Embedded SRAM prototype with SOTB Structure.png - Electronics-Lab.com

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Renesas Electronics Achieves Lowest Embedded SRAM Power of 13.7 nW/Mbit

Renesas Electronics Corporation announced the successful development of a new low-power SRAM circuit technology that achieves a record ultra-low power consumption of 13.7 nW/Mbit in standby mode. The prototype SRAM also achieves a high-speed readout time of 1.8 ns during active operation. Renesas ... Read More

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