![SGT120R65AL – 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor SGT120R65AL – 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor](https://www.electronics-lab.com/wp-content/uploads/2022/03/P4409I-First-PowerGaN-products_IMAGE-1-1.png)
The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
- Enhancement mode normally off transistor
- Very high switching speed
- High power management capability
- Extremely low capacitances
- Kelvin source pad for optimum gate driving
- Zero reverse recovery charge
more information: https://www.st.com/en/power-transistors/sgt120r65al.html
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