rcj_Yole_Power_Trasistors_SiC_GaN_1.png - Electronics-Lab.com

3 September, 2015

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by R. Colin Johnson @ eetimes.com: PORTLAND, Ore.—Today Yole Development predicted that power transistors would radically shift from silicon wafers to silicon carbide (SiC) and gallium nitride (GaN) substrates—to achieve higher power in smaller spaces, according to its GaN and SiC Devices... Read More

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