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Tag: eGaN
EPC2067 40 V, 409 A(pulsed) eGaN FET
EPC's EPC2067 is a 40 V eGaN FET for state-of-the-art power density The EPC2067 from EPC is a 40 V, 1.3 mΩ (typical) eGaN FET with a pulsed current rating of 409 A in a tiny 9.3 mm2 footprint. This device is ideal for applications with demanding high power density performance...
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GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board
EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation...
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MPS taps EPC for 48V GaN DC-DC converter
The combination of MPS (Monolithic Power Systems) controllers with ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enable best-in-class power density of 1700 W/in3 in high efficiency, low cost LLC DC-DC Conversion Monolithic Power Systems, Inc. (MPS), a leading...
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GaN FETs step up performance, cut package footprint
by Graham Prophet @ edn-europe.com: Representing a step forward in performance and cost, the latest eGaN (gallium nitride) power FETs from Efficient Power Conversion (EPC), EPC2045 and EPC2047, are half the size of prior generation eGaN transistors with significantly higher...
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