Tag: Flosfia
![GaO beats SiC in channel mobility GaO beats SiC in channel mobility](https://www.electronics-lab.com/wp-content/uploads/2020/01/gallium_MOSFET-1024x394.png)
Science
GaO beats SiC in channel mobility
Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration. Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide...
Continue Reading