Cambridge GaN devices launched second series of its ICeGaN 650 V Gallium Nitride HEMT family
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Cambridge GaN devices launched second series of its ICeGaN 650 V Gallium Nitride HEMT family

Second series of ICeGaN 650 V Gallium Nitride HEMT family deliver best-in-class robustness, Ease-Of-Use & high efficiency Cambridge GaN Devices launched the second series of its ICeGaN 650 V gallium nitride HEMT family, delivering industry-leading robustness, ease-of-use and...

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Book Release: GaN Power Devices and Applications
Books

Book Release: GaN Power Devices and Applications

The book "GaN power devices and applications" is a guide for designers dealing with GaN devices written by Alex Lidow, founder and CEO of EPC. This company manufactures GaN power transistors. The book was written with input from about 30 experts in power conversion...

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Power Integrations’ New MinE-CAP IC Reduces Volume of AC-DC Converters by Up to 40%
Power

Power Integrations’ New MinE-CAP IC Reduces Volume of AC-DC Converters by Up to 40%

Power Integrations , the leader in high-voltage integrated circuits for energy-efficient power conversion, announced the MinE-CAP™ IC for high power density, universal input AC-DC converters. By halving the size of the high-voltage bulk electrolytic capacitors required in...

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300W GaN-Based Ultra-High Power Density AC-DC Adapter Reference Design
Power supplyTop Stories

300W GaN-Based Ultra-High Power Density AC-DC Adapter Reference Design

GaN Systems and ON Semiconductor announced the availability of the NCP13992UHD300WGEVB, the world’s highest power density 300W ac-dc adapter reference design using GaN Systems’ 650V, 15A gallium-nitride (GaN) E-HEMTs and multiple ON Semiconductor controller and driver ICs,...

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