Tag: GaN

Second series of ICeGaN 650 V Gallium Nitride HEMT family deliver best-in-class robustness, Ease-Of-Use & high efficiency Cambridge GaN Devices launched the second series of its ICeGaN 650 V gallium nitride HEMT family, delivering industry-leading robustness, ease-of-use and...

GaN power switching technology has been around for many years. By now, many design engineers are familiar with the technology and have redesigned their products to take advantage of GaN power devices’ key features such as fast switching, zero reverse recovery current, etc… By using...

Innergie, a consumer power brand of Delta that won several international certifications and awards, today announced the launch of the C6 60 W USB-C adapter for Innergie’s flagship “One For All” Series. The latest C6 adapter takes advantage of Gallium Nitride (GaN) technology and...

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and...

GaN Systems GS-065-060-3 650V Enhancement Mode GaN (Gallium Nitride) Transistor is a power transistor optimized for high current, high voltage breakdown, and high switching frequency. The GS-065-060-3 features an Island Technology® cell layout, reducing the size of the device while...

HDPLEX company which is known for its fan-less and compact PCs, reveals its passive GaN AIO (All-In-One) ATX PSU ( Advanced Technology eXtended Power Supply) with an output power of 250W. It makes use of the cutting-edge GaN (Gallium Nitride) technology that can be found in some tiny...

EPC's EPC9160 9 V to 24 V to dual output 5 V/3.3 V synchronous buck converter reference design EPC's EPC9160 is a 9 V to 24 V to dual output 5 V/3.3 V, 15 A synchronous buck converter operating at 2 MHz switching frequency. The EPC9160 features the EPC2055 GaN FET and LTC7890 two-phase...

Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering a very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne HiRel’s 100 V high-reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital...