Tag: GAN039-650NTB
![GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET](https://www.electronics-lab.com/wp-content/uploads/2022/06/nexperia-gan039-650ntb.jpg)
Parts
GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and...
Continue Reading