Tag: IGBT

The project presented here is designed for high-voltage and high-speed driving for MOSFETS and IGBTs that operate up to +1200V. The project consists of a FAN73912 gate driver chip and 2 x IGBTs, DC bus capacitors, current sense resistor for current feedback etc. The advanced input...

Littelfuse, Inc., a global manufacturer of leading technologies in circuit protection, power control, and sensing, announced its IX4351NE SiC MOSFET and IGBT Driver has been named a Green Energy Award Winner for 21ic.com’s 2020 Annual Power Product Awards. Held for the last 17 years,...

STSPIN32F025x and STSPIN32F060x system-in-package are an extremely integrated solution for driving three-phase applications STSPIN32F025x and STSPIN32F060x system-in-package are an extremely integrated solution for driving three-phase applications. It embeds an STM32F031 featuring...

The main purpose of this application report is to demonstrate a systematic approach to design high-performance gate drive circuits for high-speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design...

NFAQ1060L36T - Three-phase 10 A / 600 V IGBT module with integrated drivers using DBC substrate. The NFAQ1060L36T is a fully-integrated inverter power stage consisting of a high-voltage driver, six IGBT’s and a thermistor, suitable for driving permanent magnet synchronous (PMSM)...

With an RDS(on) of just 7 mΩ, the new SiC-FETs from UnitedSiC are designed for high performance switching in high power applications such as motor control in the automotive sector or for DC/DC converters and vehicle chargers . Based on a unique cascode configuration, the UF3C/UF3SC...

Infineon Technologies AG introduced the new IGBT7 chip for its well-known Easy housing platform in March. Now it is taking the state-of-the-art TRENCHSTOP™ IGBT7 to the arena of medium power: in the standard industry package EconoDUAL™ 3. In this chip technology, the 1200...

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