Tag: InGaAs
![Marktech reflective sensors feature 0.5-1.5mm short detection distance Marktech reflective sensors feature 0.5-1.5mm short detection distance](https://www.electronics-lab.com/wp-content/uploads/2019/10/Marktech-Optoelectronics-Surface-Mount-Reflector-Sensors-e1570191711176-1024x602.jpg)
Marktech reflective sensors feature 0.5-1.5mm short detection distance
Marktech Optoelectronics has announced the expansion of its surface-mount family of SWIR reflective sensors. The sensors are suitable for position sensing and detection applications, including card, barcode, edge sensing and money bill readers. Marktech surface-mount SWIR reflective...
Continue Reading![InGaAs image sensor detects short-wavelength-IR up to 2.55µm InGaAs image sensor detects short-wavelength-IR up to 2.55µm](https://www.electronics-lab.com/wp-content/uploads/2019/06/g14674-0808w.jpg)
InGaAs image sensor detects short-wavelength-IR up to 2.55µm
Hamamatsu Photonics has developed an InGaAs area image sensor for hyperspectral cameras capable of detecting short-wavelength-infrared light up to 2.55 µm which is the world’s longest wavelength detectable by this type of area image sensor. By applying compound opto-semiconductor...
Continue Reading![InGaAs TFET, a potential alternative to MOSFET in future ultralow power chips InGaAs TFET, a potential alternative to MOSFET in future ultralow power chips](https://www.electronics-lab.com/wp-content/uploads/2017/03/170307edne-imec-image-1024-1024-13184.jpg)
InGaAs TFET, a potential alternative to MOSFET in future ultralow power chips
by Graham Prophet @ edn-europe.com: Belgian researchers from imec, at a conference** dedicated to compound semiconductor technology, are to present promising device results with a InGaAs-only TFET (tunnel field-effect transistor) that achieves a sub-60 mV/decade sub-threshold swing at...
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