Tag: memory

Piers Finlayson shares his adventures in programming the ESP8266 to access 16MB flash: To put this in context, the original ESP8266 modules (such as the ESP-01) offered 512KB of flash, with the more recent ones (ESP-07) 1MB and then 4MB. The maximum addressable flash memory of the...

Toshiba will start mass production of 64-layer 3D NAND, BiCS3, with 3-bit-per-cell technology and a 64GB capacity in the first half of 2017. The applications of this new massive storage chip include enterprise and consumer SSD, smartphones, tablets and memory cards. This achievement...

A team of scientists at the Kavli Institute of Nanoscience at Delft University has achieved what may represent a limit in information storage density by creating a memory in which a single bit is represented by a single atom. By Graham Prophet @ edn-europe.com: Specifically, the team...

Pete show us how to upgrade your ESP8266 with 32Mbit memory chip. Some time ago I passed comment in here about converting an ESP-01 to 32Mb  (or 4MB).  And here it is in the flesh – a 32Mb ESP-01 – and also – at last – Sonoff Upgrades. Now, why would you want to do all...

For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM). The current memory landscape spans from venerable DRAM to hard disk drives to ubiquitous flash. But...

by Harry Baggen @ elektormagazine.com: Magnetic random-access memory (MRAM) is faster, more efficient and more robust than other data storage media. MRAM stores data by making clever use of electron spin – a sort of gyroscopic property of electrons. Because it used magnetism...

Chris @ insentricity.com wanted to test a few dozen individual RAM chips so he decided to use Arduino to make his life a little bit easier. In the article he explains the interface with Arduino and gives the code on github. My first thought was to test the chips in the TL866CS, but...

by Samsung: Samsung Electronics announced that it is mass producing the industry's first 12-gigabit (Gb) LPDDR4 (low power, double data rate 4) mobile DRAM, based on its advanced 20-nanometer (nm) process technology. The newest LPDDR4 is expected to significantly accelerate the...