Tag: MOSFET
![MOSFET optimized for small, thin devices MOSFET optimized for small, thin devices](https://www.electronics-lab.com/wp-content/uploads/2022/12/Rohm-RA1C030LD-MOSFET-power-and-package-comparison.png)
MOSFET optimized for small, thin devices
Rohm has introduced a high-efficiency 20-V N-channel MOSFET, targeting small, thin devices including smartphones, wearables, and hearables. Rohm Semiconductor has developed a compact, high-efficiency 20-V N-channel MOSFET in a DSN1006-3 WLCSP (1.0 × 0.6 mm) package, delivering...
Continue Reading![800 V and 950 V AC-DC integrated power stages expand the fixed-frequency CoolSET™ portfolio 800 V and 950 V AC-DC integrated power stages expand the fixed-frequency CoolSET™ portfolio](https://www.electronics-lab.com/wp-content/uploads/2022/09/5th_Generatin_CoolSET-966x1024.jpg)
800 V and 950 V AC-DC integrated power stages expand the fixed-frequency CoolSET™ portfolio
Optimized performance, efficiency, and reliability in high-voltage power supplies need to be combined with reduced bill-of-material (BOM) count and cost, as well as lower design efforts. With its 5 th generation fixed-frequency (FF) CoolSET™ portfolio, Infineon Technologies AG...
Continue Reading![CotoMOS® CS140 High-Voltage MOSFET Relay CotoMOS® CS140 High-Voltage MOSFET Relay](https://www.electronics-lab.com/wp-content/uploads/2022/07/coto-tech-cotomos-cs140-200.png)
CotoMOS® CS140 High-Voltage MOSFET Relay
Coto Technology's 140 series features high-voltage 1500 V switching and high-load current. Coto Technology’s CotoMOS 140 series high voltage relays combine Coto quality and economy in an industry-standard 6-pin package. This MOSFET relay offers high-voltage switching and high-load...
Continue Reading![GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET](https://www.electronics-lab.com/wp-content/uploads/2022/06/nexperia-gan039-650ntb.jpg)
GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and...
Continue Reading![New 150V N-channel Power MOSFET with Low On-Resistance to Improve Power Supply Efficiency New 150V N-channel Power MOSFET with Low On-Resistance to Improve Power Supply Efficiency](https://www.electronics-lab.com/wp-content/uploads/2022/03/N-channel-power-MOSFET.jpg)
New 150V N-channel Power MOSFET with Low On-Resistance to Improve Power Supply Efficiency
Toshiba has launched a 150V N-channel power MOSFET “TPH9R00CQH” that uses the latest generation process, “U-MOSX-H,” and that is suitable for use in switching power supplies for industrial equipment - including those deployed in data centers and communications base stations....
Continue Reading![Dual-channel low-side 4/5-A gate driver ICs handle fast MOSFET, WBG switches Dual-channel low-side 4/5-A gate driver ICs handle fast MOSFET, WBG switches](https://www.electronics-lab.com/wp-content/uploads/2022/03/EiceDRIVER_2EDN_family_extension-1024x820.jpeg)
Dual-channel low-side 4/5-A gate driver ICs handle fast MOSFET, WBG switches
Infineon Technologies AG has released the new EiceDRIVER 2EDN product family. Aiming at space-limited designs, the next-generation devices complement the existing 2EDN driver ICs by providing higher system-level efficiencies, excellent power density, and consistent system robustness...
Continue Reading![Diodes Incorporated AP61300Q/AP61302Q Synchronous Buck Converters Diodes Incorporated AP61300Q/AP61302Q Synchronous Buck Converters](https://www.electronics-lab.com/wp-content/uploads/2022/03/AP61302Q20Application20circuit.png)
Diodes Incorporated AP61300Q/AP61302Q Synchronous Buck Converters
Diodes Incorporated AP61300Q/AP61302Q Synchronous Buck Converters are automotive-compliant, 3A, converters having a wide input voltage range of 2.4V to 5.5V. These devices completely integrate a 70mΩ high-side power MOSFET and a 50mΩ low-side power MOSFET which provides...
Continue Reading![New N-Channel MOSFET with Maximum Power Dissipation of 0.5W New N-Channel MOSFET with Maximum Power Dissipation of 0.5W](https://www.electronics-lab.com/wp-content/uploads/2022/03/SOT_323_3_DSL.png)
New N-Channel MOSFET with Maximum Power Dissipation of 0.5W
Compact N-Channel 30V MOSFET from Vishay in Stock at TTI TTI, Inc., a leading specialty distributor of electronic components, has stock for immediate shipment of Vishay’s TrenchFET® Si1308EDL 30V N-Channel MOSFET in the compact SOT-323/SC-70 surface mount package. The three-leaded...
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