Tag: MOSFET
![STMicroelectronics unveils new generation of SiC power technology tailored for next-generation EV traction inverters STMicroelectronics unveils new generation of SiC power technology tailored for next-generation EV traction inverters](https://www.electronics-lab.com/wp-content/uploads/2024/10/Depositphotos_679969666_L-1024x576.jpg)
STMicroelectronics unveils new generation of SiC power technology tailored for next-generation EV traction inverters
Smaller, more efficient products to ramp-up in volumes through 2025 across 750V and 1200V classes, will bring the advantages of silicon carbide beyond premium models to mid-size and compact electric vehicles. ST plans to introduce multiple silicon carbide technology innovations...
Continue Reading![Pololu H2 High-Power DC Motor Driver for Robotics Pololu H2 High-Power DC Motor Driver for Robotics](https://www.electronics-lab.com/wp-content/uploads/2024/09/Pololu-H2-high-power-DC-motor-driver-02-1024x826.jpg)
Pololu H2 High-Power DC Motor Driver for Robotics
The Pololu H2 High-Power DC Motor Driver 36v11 CS is a compact and efficient motor driver designed for high-power brushed DC motors. Measuring just 1.3" x 0.8", it supports a range of 5V to 60V and can handle up to 11 amps of current. Even though it doesn’t have a special cooling...
Continue Reading![MOSFET optimized for small, thin devices MOSFET optimized for small, thin devices](https://www.electronics-lab.com/wp-content/uploads/2022/12/Rohm-RA1C030LD-MOSFET-power-and-package-comparison.png)
MOSFET optimized for small, thin devices
Rohm has introduced a high-efficiency 20-V N-channel MOSFET, targeting small, thin devices including smartphones, wearables, and hearables. Rohm Semiconductor has developed a compact, high-efficiency 20-V N-channel MOSFET in a DSN1006-3 WLCSP (1.0 × 0.6 mm) package, delivering...
Continue Reading![800 V and 950 V AC-DC integrated power stages expand the fixed-frequency CoolSET™ portfolio 800 V and 950 V AC-DC integrated power stages expand the fixed-frequency CoolSET™ portfolio](https://www.electronics-lab.com/wp-content/uploads/2022/09/5th_Generatin_CoolSET-966x1024.jpg)
800 V and 950 V AC-DC integrated power stages expand the fixed-frequency CoolSET™ portfolio
Optimized performance, efficiency, and reliability in high-voltage power supplies need to be combined with reduced bill-of-material (BOM) count and cost, as well as lower design efforts. With its 5 th generation fixed-frequency (FF) CoolSET™ portfolio, Infineon Technologies AG...
Continue Reading![CotoMOS® CS140 High-Voltage MOSFET Relay CotoMOS® CS140 High-Voltage MOSFET Relay](https://www.electronics-lab.com/wp-content/uploads/2022/07/coto-tech-cotomos-cs140-200.png)
CotoMOS® CS140 High-Voltage MOSFET Relay
Coto Technology's 140 series features high-voltage 1500 V switching and high-load current. Coto Technology’s CotoMOS 140 series high voltage relays combine Coto quality and economy in an industry-standard 6-pin package. This MOSFET relay offers high-voltage switching and high-load...
Continue Reading![GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET](https://www.electronics-lab.com/wp-content/uploads/2022/06/nexperia-gan039-650ntb.jpg)
GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and...
Continue Reading![New 150V N-channel Power MOSFET with Low On-Resistance to Improve Power Supply Efficiency New 150V N-channel Power MOSFET with Low On-Resistance to Improve Power Supply Efficiency](https://www.electronics-lab.com/wp-content/uploads/2022/03/N-channel-power-MOSFET.jpg)
New 150V N-channel Power MOSFET with Low On-Resistance to Improve Power Supply Efficiency
Toshiba has launched a 150V N-channel power MOSFET “TPH9R00CQH” that uses the latest generation process, “U-MOSX-H,” and that is suitable for use in switching power supplies for industrial equipment - including those deployed in data centers and communications base stations....
Continue Reading![Dual-channel low-side 4/5-A gate driver ICs handle fast MOSFET, WBG switches Dual-channel low-side 4/5-A gate driver ICs handle fast MOSFET, WBG switches](https://www.electronics-lab.com/wp-content/uploads/2022/03/EiceDRIVER_2EDN_family_extension-1024x820.jpeg)
Dual-channel low-side 4/5-A gate driver ICs handle fast MOSFET, WBG switches
Infineon Technologies AG has released the new EiceDRIVER 2EDN product family. Aiming at space-limited designs, the next-generation devices complement the existing 2EDN driver ICs by providing higher system-level efficiencies, excellent power density, and consistent system robustness...
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