Tag: MOSFET

GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal...

TinyLoad is a simple electronic constant current dummy load. The ATtiny measures voltage, current and temperature of the heat sink, calculates power, energy and battery capacity, controls the fan and displays all relevant data on the OLED. The button is used to switch between...

RICOH has introduced R5445 Series of 1-Cell Li-ion battery protection IC with built-in driver for high-side Nch FETs and temperature protection. This new IC serves as Li+ / Li-polymer protector of overcharge, over-discharge, and over current for battery pack. The R5445 Series IC can...

Diodes Incorporated AP64200Q Automotive Synchronous Buck Converter fully integrates a 150mΩ high-side power MOSFET and an 80mΩ low-side power MOSFET to provide high-efficiency step-down DC-DC conversion. The AP64200Q design is optimized for Electromagnetic Interference (EMI)...

  The BD9F500QUZ from ROHM Semiconductor is a DC to DC Converter with Input Voltage 4.5 to 36 V, Output Voltage 1 0.6 to 14 V, Output Current 1 0 to 5000 mA, Storage Temperature -55 to 150 °C. Tags: Surface Mount, Buck/Step down. More details for BD9F500QUZ can be seen...

LFPAK56D half-bridge - 60% lower parasitic inductance and improved thermal performance A series of half-bridge (high side & low side) MOSFETs constructed in the space-saving LFPAK56D package format. Occupying 30% lower PCB area compared to dual MOSFETs for 3 phase motor control...

OMRON Electronic Components Europe has introduced new high voltage and high current versions of its T-configuration MOSFET relay modules. The new G3VM T-modules with mechanical and MOSFET relay technology provides an accurate, compact, and long-lasting switching solution with no...

At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are...