Tag: MPN: UJ4C075044K3S

SiC power FETs boast super-low 6-mΩ RDS(on)
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SiC power FETs boast super-low 6-mΩ RDS(on)

At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are...

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