Tag: phase-change memory
![IBM scientists achieve storage memory breakthrough IBM scientists achieve storage memory breakthrough](https://www.electronics-lab.com/wp-content/uploads/2016/05/573afc3b4ca56-e1464172756857.jpeg)
Technology
IBM scientists achieve storage memory breakthrough
For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM). The current memory landscape spans from venerable DRAM to hard disk drives to ubiquitous flash. But...
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