Tag: ß-Ga2O3
![Energy-efficient power electronics – gallium oxide power transistors with record values Energy-efficient power electronics – gallium oxide power transistors with record values](https://www.electronics-lab.com/wp-content/uploads/2019/09/FBH_2019_27_gallium_oxide_chip-1024x661.jpg)
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Energy-efficient power electronics – gallium oxide power transistors with record values
The Ferdinand Braun Institute for Highest Frequency Technology (FBH) in Berlin has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The ß-Ga2O3 gallium oxide MOSFETs developed by FBH scientists provide a high breakdown voltage with high current...
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