Tag: SiC
![onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET](https://www.electronics-lab.com/wp-content/uploads/2022/03/122260267.png)
onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET
onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized MOSFET is designed with low ON resistance and ensures low capacitance and gate charge. The...
Continue Reading![GeneSiC Semiconductor 3300V SiC MOSFETs GeneSiC Semiconductor 3300V SiC MOSFETs](https://www.electronics-lab.com/wp-content/uploads/2021/11/Screenshot-2021-11-17-at-17-48-44-3300V-SiC-MOSFETs.png)
GeneSiC Semiconductor 3300V SiC MOSFETs
GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal...
Continue Reading![SiC power FETs boast super-low 6-mΩ RDS(on) SiC power FETs boast super-low 6-mΩ RDS(on)](https://www.electronics-lab.com/wp-content/uploads/2021/09/4L-drawnchip-2-9-2-21.jpg)
SiC power FETs boast super-low 6-mΩ RDS(on)
At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are...
Continue Reading![BM2SC12xFP2-LBZ Quasi-Resonant AC/DC Converter BM2SC12xFP2-LBZ Quasi-Resonant AC/DC Converter](https://www.electronics-lab.com/wp-content/uploads/2021/08/TO263-7L.png)
BM2SC12xFP2-LBZ Quasi-Resonant AC/DC Converter
ROHM's BM2SC12xFP2-LBZ quasi-resonant AC/DC converter with built-in 1700 V SiC-MOSFET features a wide input voltage range. ROHM's large current integrated FET type switching regulators are compatible with virtually all switching power supply applications. Features include a wide...
Continue Reading![Silicon Carbide (SiC) Ultra-Fast Switching MOSFETs – LSIC1MO Series Silicon Carbide (SiC) Ultra-Fast Switching MOSFETs – LSIC1MO Series](https://www.electronics-lab.com/wp-content/uploads/2021/06/Littelfuse_Power_Semiconductor_Silicon_Carbide_LSIC1MO120E0080_Image.jpg-e1624791679158-1024x795.jpg)
Silicon Carbide (SiC) Ultra-Fast Switching MOSFETs – LSIC1MO Series
Littelfuse offers enhancement-mode N-channel SiC MOSFET, LSIC1MO series SiC MOSFETs from IXYS: A Littelfuse Technology offer an exceptional alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved...
Continue Reading![Littelfuse IX4351NE SiC MOSFET & IGBT Driver Wins Annual Power Product Award Littelfuse IX4351NE SiC MOSFET & IGBT Driver Wins Annual Power Product Award](https://www.electronics-lab.com/wp-content/uploads/2020/12/IX2120B_IXYS_Integrated_Circuits_Mouser_Greece.png)
Littelfuse IX4351NE SiC MOSFET & IGBT Driver Wins Annual Power Product Award
Littelfuse, Inc., a global manufacturer of leading technologies in circuit protection, power control, and sensing, announced its IX4351NE SiC MOSFET and IGBT Driver has been named a Green Energy Award Winner for 21ic.com’s 2020 Annual Power Product Awards. Held for the last 17 years,...
Continue Reading![STMicroelectronics Silicon Carbide Power MOSFETs STMicroelectronics Silicon Carbide Power MOSFETs](https://www.electronics-lab.com/wp-content/uploads/2020/09/Y1501488-01.jpg)
STMicroelectronics Silicon Carbide Power MOSFETs
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. Features...
Continue Reading![High-Performance Silicon Carbide (SiC) Schottky Diodes High-Performance Silicon Carbide (SiC) Schottky Diodes](https://www.electronics-lab.com/wp-content/uploads/2020/08/SIC20120PTA_BP_Micro_Commercial_Co_Discrete_Semiconductor_Products_DigiKey.png)
High-Performance Silicon Carbide (SiC) Schottky Diodes
MCC’s SiC diodes are well-suited for inverters for solar and motion control, UPS, Telekom base stations, PFC, and lighting Micro Commercial Components’ high-performance SiC Schottky diodes provide a high-efficiency, high-temperature performance of up to +175°C. These diodes,...
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