Tag: SiC

Smaller, more efficient products to ramp-up in volumes through 2025 across 750V and 1200V classes, will bring the advantages of silicon carbide beyond premium models to mid-size and compact electric vehicles. ST plans to introduce multiple silicon carbide technology innovations...

onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized MOSFET is designed with low ON resistance and ensures low capacitance and gate charge. The...

GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal...

At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are...

ROHM's BM2SC12xFP2-LBZ quasi-resonant AC/DC converter with built-in 1700 V SiC-MOSFET features a wide input voltage range. ROHM's large current integrated FET type switching regulators are compatible with virtually all switching power supply applications. Features include a wide...

Littelfuse offers enhancement-mode N-channel SiC MOSFET, LSIC1MO series SiC MOSFETs from IXYS: A Littelfuse Technology offer an exceptional alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved...

Littelfuse, Inc., a global manufacturer of leading technologies in circuit protection, power control, and sensing, announced its IX4351NE SiC MOSFET and IGBT Driver has been named a Green Energy Award Winner for 21ic.com’s 2020 Annual Power Product Awards. Held for the last 17 years,...

STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. Features...