Tag: STPSC8H065
![STMicroelectronics STPSC8H065 is a silicon carbide power Schottky diode STMicroelectronics STPSC8H065 is a silicon carbide power Schottky diode](https://www.electronics-lab.com/wp-content/uploads/2020/02/st-ST12977_Power-flat.jpg)
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STMicroelectronics STPSC8H065 is a silicon carbide power Schottky diode
STPSC8H065 - 650 V, 8 A high surge silicon carbide power Schottky diode This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a...
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