Tag: Transistor

GaN Systems GS-065-060-3 650V Enhancement Mode GaN (Gallium Nitride) Transistor is a power transistor optimized for high current, high voltage breakdown, and high switching frequency. The GS-065-060-3 features an Island Technology® cell layout, reducing the size of the device while...

Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor features a very low collector-emitter saturation voltage, high collector current capability, and high efficiency due to less heat generation. The PBSS4310PAS-Q is housed in an ultra-thin SOT1061D (DFN2020D-3) leadless small...

UnitedSiC UF3N170400B7S 1700V-400mW SiC Normally-on JFET exhibits ultra-low on-resistance (RDS(ON)) and gate charge (QG) that allows low conduction and switching loss. The low RDS(ON) value of this JFET at VGS = 0V is ideal for current protection circuits without the need for active...

The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable...

The book "GaN power devices and applications" is a guide for designers dealing with GaN devices written by Alex Lidow, founder and CEO of EPC. This company manufactures GaN power transistors. The book was written with input from about 30 experts in power conversion...

Toshiba 2SA/2SC Bipolar Transistors are AEC-Q101 qualified and designed for low-frequency, AM, and audio frequency general purpose amplifier applications. The 2SA/2SC Transistors feature high voltage, high collector current, high hFE, and excellent hFE linearity. The Toshiba 2SA/2SC...

GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal...

The EPC2216 from Efficient Power Conversion is a GaN Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 15 V, Drain Source Resistance 20 to 26 milli-ohm, Continous Drain Current 3.4 A, Pulsed Drain Current 28 A. Specifications Configuration: Single...