Tag: Transistor
Rodriguez – The World’s Slowest IV Tracer
Joseph Eoff has posted on Hackaday details about Rodriguez, which is an IV tracer. About the origin of the project, he says: “Rodriguez started as a nameless project I used to make a point in an online discussion about the shape of the current/voltage plot of the base/emitter...
Continue ReadingTA9410E RF GaN Transistor is ideal for radio applications
Tagore’s transistor is ideal for radio applications such as public safety radios and EW radios. Tagore's TA9410E is a broadband 50 V, 25 W GaN transistor capable of operating from 20 M to 3 GHz. Using a simple input/output match, it can be tuned for various bands of interest....
Continue Reading3D printed liquid cooled heatsinks cool down TO-247 transistors
Standard Transistor Cooler Made by 3D-printing using SLM (Selective Laser Melting) A very effective way to dissipate the high heat flux densities of electronic power modules or power devices with high power density is the use of micro-coolers or micro-channel heat sinks made by SML....
Continue ReadingAspenCore Book Highlights GaN’s role for the New Power Electronics World
Why Wide BandGap (WBG), and why GaN specifically? AspenCore Media’s new book, the “AspenCore Guide to Gallium Nitride: A New Era for Power Electronics,” answers those questions and more. WBG power semiconductor devices in silicon carbide and GaN technology provide design...
Continue ReadingEPC2218 Enhancement-Mode GaN Power Transistors
EPC's 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency EPC's EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with...
Continue ReadingFirst Bizen quantum tunnelling transistors launched
A UK startup is to ship its first 1200V power devices using a new silicon architecture called Bizen that fits into TO247 or TO263 packages. by Nick Flaherty @ eenewseurope.com The first devices to use the Bizen process technology include three parts rated at 1200V/75A, 900V/75A and...
Continue ReadingSingle-atom transistor ‘recipe’ simplifies atomic-scale fabrication
Researchers at the National Institute of Standards and Technology (NIST) and the University of Maryland say they have developed a step-by-step recipe to produce single-atom transistors. by Rich Pell @ smart2zero.com Transistors consisting of only several-atom clusters or even single...
Continue ReadingCoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications
Infineon Technologies AG continues to expand its comprehensive silicon carbide (SiC) product portfolio with 650 V devices. With the newly launched CoolSiC™ MOSFETs Infineon is addressing the growing demand for energy efficiency, power density, and robustness in a wide range of...
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