Tag: Transistor
![Rodriguez – The World’s Slowest IV Tracer Rodriguez – The World’s Slowest IV Tracer](https://www.electronics-lab.com/wp-content/uploads/2021/07/Rodriguez-Schematic-1024x863.png)
Rodriguez – The World’s Slowest IV Tracer
Joseph Eoff has posted on Hackaday details about Rodriguez, which is an IV tracer. About the origin of the project, he says: “Rodriguez started as a nameless project I used to make a point in an online discussion about the shape of the current/voltage plot of the base/emitter...
Continue Reading![TA9410E RF GaN Transistor is ideal for radio applications TA9410E RF GaN Transistor is ideal for radio applications](https://www.electronics-lab.com/wp-content/uploads/2021/04/1615579348409.jpg)
TA9410E RF GaN Transistor is ideal for radio applications
Tagore’s transistor is ideal for radio applications such as public safety radios and EW radios. Tagore's TA9410E is a broadband 50 V, 25 W GaN transistor capable of operating from 20 M to 3 GHz. Using a simple input/output match, it can be tuned for various bands of interest....
Continue Reading![3D printed liquid cooled heatsinks cool down TO-247 transistors 3D printed liquid cooled heatsinks cool down TO-247 transistors](https://www.electronics-lab.com/wp-content/uploads/2021/02/iq_evolution-1024x541.jpg)
3D printed liquid cooled heatsinks cool down TO-247 transistors
Standard Transistor Cooler Made by 3D-printing using SLM (Selective Laser Melting) A very effective way to dissipate the high heat flux densities of electronic power modules or power devices with high power density is the use of micro-coolers or micro-channel heat sinks made by SML....
Continue Reading![AspenCore Book Highlights GaN’s role for the New Power Electronics World AspenCore Book Highlights GaN’s role for the New Power Electronics World](https://www.electronics-lab.com/wp-content/uploads/2021/01/gan_cover_1275_002_jpg_WEBP_Image_1187_×_1536_pixels_—_Scaled_86_-773x1024.jpg)
AspenCore Book Highlights GaN’s role for the New Power Electronics World
Why Wide BandGap (WBG), and why GaN specifically? AspenCore Media’s new book, the “AspenCore Guide to Gallium Nitride: A New Era for Power Electronics,” answers those questions and more. WBG power semiconductor devices in silicon carbide and GaN technology provide design...
Continue Reading![EPC2218 Enhancement-Mode GaN Power Transistors EPC2218 Enhancement-Mode GaN Power Transistors](https://www.electronics-lab.com/wp-content/uploads/2021/01/BlogImage.ashx_-1024x538.jpg)
EPC2218 Enhancement-Mode GaN Power Transistors
EPC's 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency EPC's EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with...
Continue Reading![First Bizen quantum tunnelling transistors launched First Bizen quantum tunnelling transistors launched](https://www.electronics-lab.com/wp-content/uploads/2020/09/2020-09-22-bizen.jpg)
First Bizen quantum tunnelling transistors launched
A UK startup is to ship its first 1200V power devices using a new silicon architecture called Bizen that fits into TO247 or TO263 packages. by Nick Flaherty @ eenewseurope.com The first devices to use the Bizen process technology include three parts rated at 1200V/75A, 900V/75A and...
Continue Reading![Single-atom transistor ‘recipe’ simplifies atomic-scale fabrication Single-atom transistor ‘recipe’ simplifies atomic-scale fabrication](https://www.electronics-lab.com/wp-content/uploads/2020/05/2020-05_11_s20_single_atom_transistor_recipe_fabrication_quantum.jpg)
Single-atom transistor ‘recipe’ simplifies atomic-scale fabrication
Researchers at the National Institute of Standards and Technology (NIST) and the University of Maryland say they have developed a step-by-step recipe to produce single-atom transistors. by Rich Pell @ smart2zero.com Transistors consisting of only several-atom clusters or even single...
Continue Reading![CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications](https://www.electronics-lab.com/wp-content/uploads/2020/02/650V_CoolSiC_MOSFET_TO247-4-1024x800.jpg)
CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications
Infineon Technologies AG continues to expand its comprehensive silicon carbide (SiC) product portfolio with 650 V devices. With the newly launched CoolSiC™ MOSFETs Infineon is addressing the growing demand for energy efficiency, power density, and robustness in a wide range of...
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