Tag: Transistor

Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration. Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide...

The MOSFET gate-source threshold voltage (VGS-th) and maximum gate-source voltage(VGS-max) are key parameters that are critical to the reliable operation of MOSFETs. The threshold voltage represents the voltage at which the MOSFET starts to turn on, whilst the maximum gate-source...

With an RDS(on) of just 7 mΩ, the new SiC-FETs from UnitedSiC are designed for high performance switching in high power applications such as motor control in the automotive sector or for DC/DC converters and vehicle chargers . Based on a unique cascode configuration, the UF3C/UF3SC...

Torex Semiconductor has launched its new XP231N0201TR (30V withstand voltage) for MOSFETs. The product is a general-purpose N-channel MOSFET with low on resistance and high speed switching. It can be used for various applications such as relay circuits and switching circuits. The gate...

Bipolar transistors in LFPAK56 – the true power package for smart efficiency These high-power bipolar transistors, housed in LFPAK56 (Power-SO8) packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable, energy-efficient performance,...

Process that modifies semiconductor material atom by atom could enable higher-performance electronics. Researchers from MIT and the University of Colorado have fabricated a 3-D transistor that’s less than half the size of today’s smallest commercial models. To do so, they developed...

paulv @ paulvdiyblogs.net designed and build a transistor curve tracer and documents the process on his personal blog. He writes: It's not that I use a Curve Tracer that much, but if you want to categorize or really measure the parameters of a discrete component, there is really no...

A new study about "Reduction of overheating of 2D materials" published in the Journal of Advanced Materials. The work put behind the study is credited to the researchers at the University of Illinois at Chicago College of Engineering. By joining together two-dimensional materials used...