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Tag: V-NAND
Samsung announces UFS 4.0 with 2x the performance in comparison to UFS 3.1
Samsung will be mass producing its UFS 4.0 in Q3 in a variety of capacities up to 1TB. Samsung UFS 4.0 will provide speed of up to 23.2 Gbps per lane. That’s double the previous leading UFS solution (UFS 3.1). This will make UFS 4.0 suitable for 5G smartphones with features...
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3D memory die boasts 100+ layer design
Samsung Electronics announced it has begun mass producing 250-gigabyte (GB) SATA solid state drive (SSD) that integrates the company’s sixth-generation (1xx-layer) 256-gigabit (Gb) three-bit V-NAND for global PC OEMs. by Julien Happich @ eenewseurope.com Utilizing...
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Samsung Breaks Terabyte Threshold for Smartphone Storage with eUFS
Powered by the company’s fifth-generation V-NAND, the new Universal Flash Storage offers 20x more storage than a 64GB internal memory and 10x the speed of a typical microSD card for data-intensive applications. Samsung Electronics, the world leader in advanced memory technology,...
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