Tiny automotive-compliant, 40V dual MOSFET boasts low RDS(on) resistance

Diodes Incorporated introduced DMT47M2LDVQ automotive compliant 40V dual MOSFET in a 3.3mm x 3.3mm package for automotive systems. It smartly integrates two n-channel enhancement-mode MOSFETs with the lowest R_DS(ON) (10.9mΩ at V_GS of 10V and I_D of 30.2A).

The low on-resistance conduction helps in keeping the losses to a minimum in applications like wireless charging or motor control. Besides, switching losses are minimized with the help of a typical gate charge of 14.0nC, at a V_GS of 10V and ID of 20A.

The thermally efficient PowerDI 3333-8 package of the device returns a junction-to-case thermal resistance (R_thjc) of 8.43°C/W, thereby enabling the development of end applications with a higher power density than with MOSFETs packaged individually. Furthermore, the PCB area needed for implementing automotive features including ADAS is reduced too.

Key Features of DMT47M2LDVQ Dual MOSFET:

• Fast switching speed
• 100% unclamped inductive switching
• High conversion efficiency
• Low RDS(ON) that minimizes on-state losses
• RDS(ON): 10.9mΩ at VGS of 10V and ID of 30.2A
• Low input capacitance
• Two n-channel enhancement mode
• Thermally efficient PowerDI 3333-8 package

From electric seat control to advanced driver-assistance systems (ADAS), the DMT47M2LDVQ dual MOSFET can reduce the board space footprint in many automotive applications. It is available at the price of $0.45 in 3000-piece quantities.

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